MPSA29RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

Power Dissipation :

625mW

Pin Count :

3

hFE Min :

10000

Element Configuration :

Single

Terminal Position :

BOTTOM

Continuous Collector Current :

500mA

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

Base Part Number :

MPSA29

Max Collector Current :

500mA

Collector Emitter Saturation Voltage :

1.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Radiation Hardening :

No

Max Power Dissipation :

625mW

Frequency - Transition :

200MHz

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

RoHS Status :

RoHS Compliant

Packaging :

Cut Tape (CT)

Transistor Application :

AMPLIFIER

Contact Plating :

Copper, Silver, Tin

Width :

6.35mm

Length :

6.35mm

Max Breakdown Voltage :

100V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

100V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Weight :

4.535924g

Height :

6.35mm

Emitter Base Voltage (VEBO) :

12V

Collector Emitter Voltage (VCEO) :

100V

JESD-609 Code :

e1

Polarity :

NPN

Number of Terminations :

3

Current Rating :

500mA

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Published :

2006

Number of Pins :

3

Surface Mount :

No

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

200MHz

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

100V