MPSA27G
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- Mfr.Part #
- MPSA27G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A TO92
- Stock
- 48,639
- In Stock ：
- 48,639
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 500nA
- Emitter Base Voltage (VEBO) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Terminal Position :
- BOTTOM
- REACH SVHC :
- Unknown
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Width :
- 4.19mm
- Voltage - Rated DC :
- 60V
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Surface Mount :
- No
- Base Part Number :
- MPSA27
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Length :
- 5.2mm
- Element Configuration :
- Single
- Pin Count :
- 3
- Number of Pins :
- 3
- Polarity :
- NPN
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Max Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transition Frequency :
- 125MHz
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 10000
- Max Collector Current :
- 500mA
- Datasheets
- MPSA27G
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA27G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA27G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA27G Applications
There are a lot of ON Semiconductor
MPSA27G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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