MPSA18RLRPG
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- Mfr.Part #
- MPSA18RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92
- Stock
- 26,095
- In Stock ：
- 26,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 6.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 5V
- Max Collector Current :
- 200mA
- Additional Feature :
- LOW NOISE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- MPSA18
- Collector Emitter Voltage (VCEO) :
- 300mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 160MHz
- Collector Emitter Saturation Voltage :
- 80mV
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Base Voltage (VCBO) :
- 45V
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 400
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Current Rating :
- 200mA
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 160MHz
- Published :
- 2006
- Datasheets
- MPSA18RLRPG
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA18RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6.5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 160MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MPSA18RLRPG Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18RLRPG Applications
There are a lot of ON Semiconductor
MPSA18RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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