MPSA13ZL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

30V

JESD-609 Code :

e0

Emitter Base Voltage (VEBO) :

10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

625mW

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Base Part Number :

MPSA13

Terminal Position :

BOTTOM

Mount :

Through Hole

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

30V

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Continuous Collector Current :

500mA

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

NPN - Darlington

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Max Power Dissipation :

625mW

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Transistor Application :

AMPLIFIER

Frequency - Transition :

125MHz

JESD-30 Code :

O-PBCY-T3

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

1.5V

Transition Frequency :

125MHz

Current Rating :

500mA

Published :

2005

Number of Elements :

1

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Packaging :

Tape and Box (TB)

hFE Min :

5000

Additional Feature :

EUROPEAN PART NUMBER

Peak Reflow Temperature (Cel) :

240

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Pin Count :

3

ECCN Code :

EAR99