MPSA13RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

30V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

10V

Lead Free :

Contains Lead

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

625mW

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

30V

Base Part Number :

MPSA13

JESD-609 Code :

e0

Packaging :

Tape and Box (TB)

Voltage - Rated DC :

30V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Max Collector Current :

500mA

Pin Count :

3

Frequency - Transition :

125MHz

Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Mount :

Through Hole

Transition Frequency :

125MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Current Rating :

500mA

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.5V

Peak Reflow Temperature (Cel) :

240

Published :

2005

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Continuous Collector Current :

500mA

Polarity :

NPN

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified