MPSA13RLRA
- Mfr.Part #
- MPSA13RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 24,518
- In Stock :
- 24,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 30V
- Published :
- 2007
- HTS Code :
- 8541.21.00.75
- Number of Elements :
- 1
- Surface Mount :
- No
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Base Part Number :
- MPSA13
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 30V
- Polarity :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 500mA
- Frequency - Transition :
- 125MHz
- Continuous Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Number of Pins :
- 3
- Transition Frequency :
- 125MHz
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Datasheets
- MPSA13RLRA

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA13RLRA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA13RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRA Applications
There are a lot of ON Semiconductor
MPSA13RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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