MPSA13G
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- Mfr.Part #
- MPSA13G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 17,954
- In Stock ：
- 17,954
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Height :
- 5.33mm
- Max Collector Current :
- 500mA
- Width :
- 4.19mm
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 1.5V
- Transition Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Published :
- 2005
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Weight :
- 4.535924g
- Base Part Number :
- MPSA13
- Number of Elements :
- 1
- Frequency - Transition :
- 125MHz
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 30V
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Length :
- 5.2mm
- Current Rating :
- 500mA
- Datasheets
- MPSA13G
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA13G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA13G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13G Applications
There are a lot of ON Semiconductor
MPSA13G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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