MPSA12RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 10mA 5V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Polarity :

NPN

Peak Reflow Temperature (Cel) :

240

Max Collector Current :

100nA

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

hFE Min :

20000

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Vce Saturation (Max) @ Ib, Ic :

1V @ 10μA, 10mA

Emitter Base Voltage (VEBO) :

10V

HTS Code :

8541.21.00.95

Lead Free :

Contains Lead

Voltage - Rated DC :

20V

Element Configuration :

Single

Transistor Type :

NPN - Darlington

Published :

2002

Base Part Number :

MPSA12

Collector Emitter Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Power Dissipation :

625mW

Packaging :

Tape and Box (TB)

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

20V

Mount :

Through Hole

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)