MPSA12RLRAG
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- Mfr.Part #
- MPSA12RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 22,563
- In Stock ：
- 22,563
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- MPSA12
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- hFE Min :
- 20000
- Mount :
- Through Hole
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 20V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 20V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100nA
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Datasheets
- MPSA12RLRAG
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA12RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.During maximum operation, collector current can be as low as 100nA volts.
MPSA12RLRAG Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRAG Applications
There are a lot of ON Semiconductor
MPSA12RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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