MPSA12G
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- Mfr.Part #
- MPSA12G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 22,994
- In Stock ：
- 22,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity :
- NPN
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Emitter Base Voltage (VEBO) :
- 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- MPSA12
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Max Collector Current :
- 100nA
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 20000
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2002
- Datasheets
- MPSA12G
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA12G Overview
DC current gain in this device equals 20000 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10μA, 10mA.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 100nA volts.
MPSA12G Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12G Applications
There are a lot of ON Semiconductor
MPSA12G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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