MPSA06RL
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- Mfr.Part #
- MPSA06RL
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 24,861
- In Stock ：
- 24,861
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Max Collector Current :
- 500mA
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Current Rating :
- 500mA
- Published :
- 2009
- HTS Code :
- 8541.21.00.95
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 240
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 250mV
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- MPSA06
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- 250mV
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Additional Feature :
- EUROPEAN PART NUMBER
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 80V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 100MHz
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- MPSA06RL
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RL Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA06RL Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL Applications
There are a lot of ON Semiconductor
MPSA06RL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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