MPSA06RA
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- Mfr.Part #
- MPSA06RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 4,829
- In Stock ：
- 4,829
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MPSA06
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 250mV
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e1
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Factory Lead Time :
- 26 Weeks
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Length :
- 5.2mm
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 5.33mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Weight :
- 201mg
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 100
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Width :
- 4.19mm
- Current Rating :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 80V
- Qualification Status :
- Not Qualified
- Datasheets
- MPSA06RA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).100MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA06RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RA Applications
There are a lot of ON Semiconductor
MPSA06RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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