MPS6725RLRPG
- Mfr.Part #
- MPS6725RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 50V 1A TO92
- Stock
- 37,297
- In Stock :
- 37,297
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Voltage - Rated DC :
- 50V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Rating :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MPS6725
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e1
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Transistor Type :
- NPN - Darlington
- HTS Code :
- 8541.29.00.75
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4000 @ 1A 5V
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2006
- Max Power Dissipation :
- 1W
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Frequency - Transition :
- 1GHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Continuous Collector Current :
- 1A
- Datasheets
- MPS6725RLRPG

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS6725RLRPG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 4000 @ 1A 5V.When VCE saturation is 1.5V @ 2mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts can be achieved.
MPS6725RLRPG Features
the DC current gain for this device is 4000 @ 1A 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6725RLRPG Applications
There are a lot of ON Semiconductor
MPS6725RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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