MPS6717G
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- Mfr.Part #
- MPS6717G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 47,419
- In Stock ：
- 47,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Published :
- 2006
- JESD-609 Code :
- e1
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Transition Frequency :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 1W
- hFE Min :
- 80
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.75
- Mount :
- Through Hole
- Power - Max :
- 1W
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Base Part Number :
- MPS6717
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Current Rating :
- 1A
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Datasheets
- MPS6717G
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPS6717G Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 250mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPS6717G Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPS6717G Applications
There are a lot of ON Semiconductor
MPS6717G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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