MPS6602RLRAG
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- Mfr.Part #
- MPS6602RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 8,103
- In Stock ：
- 8,103
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 4V
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 55ns
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600mV
- hFE Min :
- 50
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 3
- Current Rating :
- 1A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- MPS6602RLRAG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS6602RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 1V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MPS6602RLRAG Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602RLRAG Applications
There are a lot of ON Semiconductor
MPS6602RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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