MPS6602G
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- Mfr.Part #
- MPS6602G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 7,472
- In Stock ：
- 7,472
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.95
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 100MHz
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 1V
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Turn On Time-Max (ton) :
- 55ns
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 40V
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1A
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Transistor Type :
- NPN
- hFE Min :
- 50
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 600mV
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- MPS6602G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS6602G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
MPS6602G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6602G Applications
There are a lot of ON Semiconductor
MPS6602G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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