MPS6602

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Current - Collector Cutoff (Max) :

100nA

Max Collector Current :

1A

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Type :

NPN

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Lead Free :

Contains Lead

Transition Frequency :

100MHz

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector Emitter Saturation Voltage :

600mV

Reach Compliance Code :

not_compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Breakdown Voltage :

40V

Max Power Dissipation :

625mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Rated DC :

40V

Pbfree Code :

No

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Current Rating :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Transistor Application :

AMPLIFIER

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

HTS Code :

8541.21.00.95

Collector Base Voltage (VCBO) :

45V

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

4V

Peak Reflow Temperature (Cel) :

240

hFE Min :

50

Collector Emitter Voltage (VCEO) :

600mV

Number of Terminations :

3

Packaging :

Bulk

Turn On Time-Max (ton) :

55ns

Terminal Position :

BOTTOM

Published :

2006

JESD-609 Code :

e0