MPS6560G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

25V

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Collector Emitter Breakdown Voltage :

25V

hFE Min :

35

Power Dissipation :

625mW

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Pbfree Code :

yes

Number of Terminations :

3

Current Rating :

500mA

Transistor Type :

NPN

Max Collector Current :

500mA

Collector Base Voltage (VCBO) :

25V

Collector Emitter Saturation Voltage :

500mV

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500mA 1V

Transition Frequency :

60MHz

Voltage - Rated DC :

25V

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity/Channel Type :

NPN

Packaging :

Bulk

JESD-609 Code :

e1

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Max Power Dissipation :

625mW

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100nA

Published :

2006

Frequency :

60MHz

Pin Count :

3

Gain Bandwidth Product :

60MHz