MPS2907ARLRMG
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- Mfr.Part #
- MPS2907ARLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO92
- Stock
- 5,225
- In Stock ：
- 5,225
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Base Voltage (VCBO) :
- -60V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- -1.6V
- Turn On Time-Max (ton) :
- 45ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Published :
- 2010
- Frequency :
- 200MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- MPS2907A
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Current Rating :
- -600mA
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- hFE Min :
- 75
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MPS2907ARLRMG
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS2907ARLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
MPS2907ARLRMG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MPS2907ARLRMG Applications
There are a lot of ON Semiconductor
MPS2907ARLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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