MMST4403
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- Mfr.Part #
- MMST4403
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 PNP 0.2W -0.6A -40V Tran
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 200MHz
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Height :
- 1mm
- hFE Min :
- 30
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MMST4403
- Voltage - Rated DC :
- -40V
- Collector Emitter Breakdown Voltage :
- 40V
- Weight :
- 6.010099mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 3
- Length :
- 2.2mm
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Width :
- 1.35mm
- Max Collector Current :
- 600mA
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 200MHz
- Transistor Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 19 Weeks
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -750mV
- Turn Off Time-Max (toff) :
- 255ns
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -600mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Power Dissipation :
- 200mW
- Datasheets
- MMST4403
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST4403-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
MMST4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST4403-7-F Applications
There are a lot of Diodes Incorporated
MMST4403-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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