MMBFJ113

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Drain to Source Voltage (Vdss) :

35V

Lead Free :

Lead Free

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

-35V

Packaging :

Tape and Reel (TR)

Weight :

30mg

REACH SVHC :

No SVHC

Voltage - Cutoff (VGS off) @ Id :

500mV @ 1μA

Current Rating :

2mA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Technology :

JUNCTION

Number of Terminations :

3

ECCN Code :

EAR99

Mount :

Surface Mount

JESD-609 Code :

e3

Contact Plating :

Tin

Current - Drain (Idss) @ Vds (Vgs=0) :

2mA @ 15V

Max Power Dissipation :

350mW

Feedback Cap-Max (Crss) :

5 pF

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

42 Weeks

Voltage - Rated DC :

35V

Breakdown Voltage :

-35V

Continuous Drain Current (ID) :

2mA

Number of Channels :

1

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Resistance - RDS(On) :

100Ohm

Operating Mode :

Depletion Mode

Drain to Source Resistance :

100Ohm

Base Part Number :

MBFJ113

Pbfree Code :

yes

Terminal Form :

Gull wing

Element Configuration :

Single

Published :

2000

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Number of Elements :

1

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Height :

1.2mm

Length :

2.92mm