MJW21193

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Weight :

22.679619g

Width :

5.3mm

Collector Base Voltage (VCBO) :

400V

Current Rating :

-16A

Transistor Type :

PNP

Published :

1995

REACH SVHC :

No SVHC

Frequency :

4MHz

Max Power Dissipation :

200W

Collector Emitter Saturation Voltage :

1.4V

Pbfree Code :

yes

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

250V

Voltage - Rated DC :

-250V

Number of Elements :

1

Pin Count :

3

Element Configuration :

Single

Number of Pins :

3

Transistor Application :

AMPLIFIER

Power Dissipation :

200W

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

250V

Max Collector Current :

16A

Number of Terminations :

3

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

hFE Min :

20

Current - Collector Cutoff (Max) :

100μA

Transition Frequency :

4MHz

Gain Bandwidth Product :

4MHz

Packaging :

Tube

Polarity/Channel Type :

PNP

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

21.08mm

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8A 5V

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

JESD-609 Code :

e3

Length :

16.26mm

Factory Lead Time :

2 Weeks

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)