MJW1302AG
- Mfr.Part #
- MJW1302AG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 230V 15A TO247-3
- Stock
- 22,149
- In Stock :
- 22,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 230V
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 230V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -230V
- Number of Terminations :
- 3
- Current Rating :
- -15A
- Max Power Dissipation :
- 200W
- Radiation Hardening :
- No
- hFE Min :
- 50
- Height :
- 6.35mm
- Transition Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1A, 10A
- Collector Emitter Breakdown Voltage :
- 230V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-247AD
- Published :
- 2001
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Frequency :
- 30MHz
- Gain Bandwidth Product :
- 30MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200W
- Factory Lead Time :
- 10 Weeks
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Element Configuration :
- Single
- Length :
- 6.35mm
- Package / Case :
- TO-247-3
- Max Collector Current :
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 7A 5V
- Width :
- 6.35mm
- Datasheets
- MJW1302AG

PNP -65°C~150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-247-3 Tube Through Hole
MJW1302AG Overview
In this device, the DC current gain is 50 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1A, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJW1302AG Features
the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
MJW1302AG Applications
There are a lot of ON Semiconductor
MJW1302AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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