MJE803G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

hFE Min :

100

Current Rating :

4A

Additional Feature :

BUILT IN BIAS RESISTOR

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Voltage - Rated DC :

80V

Collector Emitter Breakdown Voltage :

80V

Width :

6.35mm

Number of Terminations :

3

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

1MHz

Emitter Base Voltage (VEBO) :

5V

Weight :

4.535924g

Surface Mount :

No

Length :

6.35mm

Current - Collector Cutoff (Max) :

100μA

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

4A

Lead Free :

Lead Free

Published :

2000

Peak Reflow Temperature (Cel) :

260

Height :

6.35mm

Halogen Free :

Halogen Free

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

AMPLIFIER

Packaging :

Bulk

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2.5V

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Collector Emitter Voltage (VCEO) :

80V

Element Configuration :

Single

Pin Count :

3

Package / Case :

TO-225AA, TO-126-3

Power Dissipation :

40W

Max Power Dissipation :

40W

Polarity :

NPN

Transistor Type :

NPN - Darlington

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MJE803

Number of Elements :

1

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)