MJE15028G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Package / Case :

TO-220-3

Height :

15.748mm

Weight :

4.535924g

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Current - Collector Cutoff (Max) :

100μA

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

2W

Width :

4.826mm

ECCN Code :

EAR99

Frequency :

30MHz

Collector Emitter Saturation Voltage :

500mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 2V

Transition Frequency :

30MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Base Voltage (VCBO) :

120V

Collector Emitter Breakdown Voltage :

120V

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

120V

Lead Free :

Lead Free

Published :

2004

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

120V

Pin Count :

3

Surface Mount :

No

Transistor Application :

AMPLIFIER

Length :

10.2616mm

Gain Bandwidth Product :

30MHz

Element Configuration :

Single

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

REACH SVHC :

No SVHC

Max Collector Current :

8A

Polarity/Channel Type :

NPN

JEDEC-95 Code :

TO-220AB

hFE Min :

40

Current Rating :

8A

Max Power Dissipation :

50W