MJ14002G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

No

Packaging :

Tray

Collector Emitter Saturation Voltage :

1V

Height :

8.51mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Vce Saturation (Max) @ Ib, Ic :

3V @ 12A, 60A

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Pins :

2

Collector Emitter Breakdown Voltage :

80V

Number of Terminations :

2

JESD-609 Code :

e1

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

1mA

Element Configuration :

Single

Length :

38.86mm

Voltage - Rated DC :

80V

Mounting Type :

Through Hole

Max Collector Current :

60A

Polarity/Channel Type :

NPN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form :

PIN/PEG

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Base Voltage (VCBO) :

80V

Power Dissipation :

300W

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

hFE Min :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 50A 3V

Transistor Type :

NPN

Current Rating :

60A

Terminal Position :

BOTTOM

Package / Case :

TO-204AE

Pin Count :

2

Max Power Dissipation :

300W

Width :

26.67mm

REACH SVHC :

No SVHC

Published :

2005

Factory Lead Time :

2 Weeks

Operating Temperature :

-65°C~200°C TJ