MG200Q2YS60A

Manufacturer :

Powerex, Inc.

Product Category :

Transistors - IGBTs - Modules

Published :

2002

Power - Max :

2000W

Case Connection :

Isolated

Transistor Element Material :

SILICON

Input Capacitance (Cies) @ Vce :

15nF @ 10V

Collector Emitter Voltage (VCEO) :

2.8V

Package / Case :

Module

Voltage - Collector Emitter Breakdown (Max) :

1200V

NTC Thermistor :

No

Current - Collector Cutoff (Max) :

1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

11

Mounting Type :

Chassis Mount

Collector Emitter Breakdown Voltage :

1.2kV

JESD-30 Code :

R-XUFM-X11

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 200A

Max Collector Current :

200A

Operating Temperature :

-20°C~150°C TJ

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount

Number of Terminations :

11

Terminal Form :

UNSPECIFIED

Configuration :

Half Bridge

Series :

IGBTMOD™

Number of Elements :

2

Max Power Dissipation :

2kW

Input Capacitance :

15nF

Input :

Standard

Terminal Position :

UPPER

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel