MCH3377-TL-E

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Mfr.Part #
MCH3377-TL-E
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
12,136
In Stock :
12,136

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
375 pF @ 10 V
Transistor Element Material :
SILICON
Subcategory :
Other Transistors
DS Breakdown Voltage-Min :
20 V
JESD-609 Code :
e6
RoHS :
Compliant
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Radiation Hardening :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Supplier Device Package :
3-MCPH
Technology :
MOSFET (Metal Oxide)
JESD-30 Code :
R-PDSO-F3
Continuous Drain Current (ID) :
3 A
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
10 V
Power Dissipation-Max (Abs) :
1 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Reach Compliance Code :
not_compliant
Power Dissipation :
1 W
Element Configuration :
Single
Resistance :
83 mΩ
Manufacturer :
ON Semiconductor
Turn-On Delay Time :
8.1 ns
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
-20 V
Rds On (Max) @ Id, Vgs :
83mOhm @ 1.5A, 4.5V
Width :
1.6 mm
Surface Mount :
yes
Rise Time :
26 ns
FET Type :
P-Channel
Pin Count :
3
Input Capacitance :
375 pF
Drain Current-Max (Abs) (ID) :
3 A
Number of Elements :
1
Package Shape :
RECTANGULAR
Number of Pins :
3
FET Feature :
-
Brand Name :
ON Semiconductor
Package :
Bulk
Drain to Source Resistance :
83 mΩ
Max Power Dissipation :
1 W
Product Status :
Active
Drain-source On Resistance-Max :
0.083 Ω
Height :
850 µm
Gate Charge (Qg) (Max) @ Vgs :
4.6 nC @ 4.5 V
Number of Terminals :
3
Min Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
20 V
Packaging :
Cut Tape (CT)
Operating Mode :
ENHANCEMENT MODE
Package / Case :
SC-70, SOT-323
Series :
-
Polarity/Channel Type :
P-Channel
Terminal Form :
Flat
Terminal Position :
Dual
Rds On Max :
83 mΩ
Max Operating Temperature :
150 °C
Length :
2 mm
Turn-Off Delay Time :
42 ns
Vgs(th) (Max) @ Id :
-
Datasheets
MCH3377-TL-E
Introducing Transistors - FETs, MOSFETs - Single onsemi MCH3377-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:SC-70, SOT-323, MCH3377-TL-E pinout, MCH3377-TL-E datasheet PDF, MCH3377-TL-E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MCH3377-TL-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MCH3377-TL-E


MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 83mOhm @ 1.5A, 4.5V 375 pF @ 10 V 4.6 nC @ 4.5 V -20 V SC-70, SOT-323

MCH3377-TL-E Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 375 pF @ 10 V.This device conducts a continuous drain current (ID) of 3 A, which is the maximum continuous current transistor can conduct.Using VGS=20 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20 V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3 A.When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 83 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10 V.A normal operation of the DS requires keeping the breakdown voltage above 20 V.This transistor requires a drain-source voltage (Vdss) of -20 V.

MCH3377-TL-E Features


a continuous drain current (ID) of 3 A
a drain-to-source breakdown voltage of 20 V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 83 mΩ
a -20 V drain to source voltage (Vdss)


MCH3377-TL-E Applications


There are a lot of ON Semiconductor
MCH3377-TL-E applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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