MCH3106-TL-E

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Mfr.Part #
MCH3106-TL-E
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 12V 3A 3MCPH
Stock
12,176
In Stock :
12,176

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e6
Max Power Dissipation :
900mW
Length :
2mm
Reach Compliance Code :
not_compliant
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Pin Count :
3
Frequency :
280MHz
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Saturation Voltage :
-165mV
Collector Emitter Voltage (VCEO) :
-165mV
Lead Free :
Lead Free
Height :
830μm
Published :
2012
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
900mW
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Element Configuration :
Single
Current - Collector (Ic) (Max) :
3A
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
100nA ICBO
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Width :
1.6mm
Number of Pins :
3
Pbfree Code :
yes
Max Collector Current :
3A
Package / Case :
SC-70, SOT-323
Collector Base Voltage (VCBO) :
15V
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
hFE Min :
200
Collector Emitter Breakdown Voltage :
12V
Vce Saturation (Max) @ Ib, Ic :
165mV @ 30mA, 1.5A
Datasheets
MCH3106-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi MCH3106-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:SC-70, SOT-323, MCH3106-TL-E pinout, MCH3106-TL-E datasheet PDF, MCH3106-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MCH3106-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MCH3106-TL-E


PNP 100nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MCH3106-TL-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of -165mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 165mV @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 3A volts at its maximum.

MCH3106-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -165mV
the vce saturation(Max) is 165mV @ 30mA, 1.5A
the emitter base voltage is kept at 5V


MCH3106-TL-E Applications


There are a lot of ON Semiconductor
MCH3106-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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