MBR50080CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Operating Temperature :

150°C

HTS Code :

8541.10.00.80

Peak Reverse Current :

1A

Number of Phases :

1

Element Configuration :

Common Anode

Terminal Position :

UPPER

Max Repetitive Reverse Voltage (Vrrm) :

80V

Published :

2013

Current - Reverse Leakage @ Vr :

1mA @ 20V

Diode Configuration :

1 Pair Common Anode

Factory Lead Time :

6 Weeks

Number of Terminations :

2

Mounting Type :

Chassis Mount

Max Surge Current :

3.5kA

Package / Case :

Twin Tower

Max Reverse Voltage (DC) :

80V

Voltage - Forward (Vf) (Max) @ If :

880mV @ 250A

Max Reverse Leakage Current :

1μA

JESD-30 Code :

R-PUFM-X2

Min Operating Temperature :

-40°C

RoHS Status :

RoHS Compliant

Application :

Power

Diode Type :

Schottky, Reverse Polarity

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount

Number of Elements :

2

ECCN Code :

EAR99

Forward Current :

500A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Average Rectified Current :

500A

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Diode Element Material :

SILICON

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Output Current-Max :

250A

Packaging :

Bulk

Current - Average Rectified (Io) :

500A DC