MBR50030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Elements :

2

Max Repetitive Reverse Voltage (Vrrm) :

30V

HTS Code :

8541.10.00.80

Max Reverse Leakage Current :

1μA

Min Operating Temperature :

-40°C

Number of Phases :

1

Diode Type :

Schottky

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X2

Current - Reverse Leakage @ Vr :

1mA @ 20V

Average Rectified Current :

500A

Package / Case :

Twin Tower

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Voltage - Forward (Vf) (Max) @ If :

750mV @ 250A

Peak Reverse Current :

1A

Diode Element Material :

SILICON

Number of Terminations :

2

Packaging :

Bulk

Max Surge Current :

3.5kA

Max Operating Temperature :

150°C

Factory Lead Time :

6 Weeks

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Forward Current :

500A

ECCN Code :

EAR99

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount

Max Reverse Voltage (DC) :

30V

Output Current-Max :

250A

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Diode Configuration :

1 Pair Common Anode

Current - Average Rectified (Io) :

500A DC

Application :

Power

Pbfree Code :

yes