MBR500100CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Voltage - Forward (Vf) (Max) @ If :

880mV @ 250A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Reverse Voltage (DC) :

100V

Max Surge Current :

3.5kA

Number of Terminations :

2

Number of Elements :

2

Mount :

Chassis Mount

Factory Lead Time :

4 Weeks

Forward Current :

500A

Current - Average Rectified (Io) :

500A DC

Packaging :

Bulk

Max Reverse Leakage Current :

1μA

Package / Case :

Twin Tower

Application :

Power

Max Repetitive Reverse Voltage (Vrrm) :

100V

Diode Type :

Schottky

Min Operating Temperature :

-40°C

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Diode Element Material :

SILICON

Mounting Type :

Chassis Mount

Element Configuration :

Common Cathode

Number of Phases :

1

Peak Reverse Current :

1A

Current - Reverse Leakage @ Vr :

1mA @ 20V

JESD-30 Code :

R-PUFM-X2

Terminal Position :

UPPER

Output Current-Max :

250A

Published :

2013

Average Rectified Current :

500A

Diode Configuration :

1 Pair Common Cathode

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)