MBR500100CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Max Reverse Voltage (DC) :

100V

Voltage - Forward (Vf) (Max) @ If :

880mV @ 250A

Output Current-Max :

250A

Package / Case :

Twin Tower

Average Rectified Current :

500A

Current - Reverse Leakage @ Vr :

1mA @ 20V

Number of Elements :

2

Diode Type :

Schottky

Terminal Form :

UNSPECIFIED

Max Operating Temperature :

150°C

Element Configuration :

Common Cathode

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Current - Average Rectified (Io) :

500A DC

Published :

2013

Max Surge Current :

3.5kA

Diode Element Material :

SILICON

Factory Lead Time :

4 Weeks

Peak Reverse Current :

1A

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Phases :

1

Min Operating Temperature :

-40°C

Application :

Power

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Forward Current :

500A

Max Repetitive Reverse Voltage (Vrrm) :

100V

Diode Configuration :

1 Pair Common Cathode

Number of Terminations :

2

Terminal Position :

UPPER

JESD-30 Code :

R-PUFM-X2

Mount :

Chassis Mount