MBR50060CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Pitch :

4.2mm

Package / Case :

Twin Tower

Max Reverse Voltage (DC) :

600V

Min Operating Temperature :

-40°C

Gender :

Male

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Operating Temperature - Junction :

-55°C~150°C

Factory Lead Time :

6 Weeks

Max Operating Temperature :

150°C

Current - Reverse Leakage @ Vr :

1mA @ 20V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.10.00.80

Element Configuration :

Common Anode

Number of Contacts :

6

Terminal Position :

UPPER

Packaging :

Bulk

ECCN Code :

EAR99

Number of Phases :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Type :

Schottky, Reverse Polarity

Terminal Form :

UNSPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

60V

JESD-30 Code :

R-PUFM-X2

Voltage - Forward (Vf) (Max) @ If :

800mV @ 250A

Max Voltage Rating (AC) :

600V

Application :

Power

Number of Terminations :

2

Mount :

Chassis Mount, Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Configuration :

1 Pair Common Anode

Current - Average Rectified (Io) :

500A DC

Forward Current :

500A

Output Current-Max :

250A

Orientation :

RIGHT ANGLE

Number of Elements :

2

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Termination :

Solder

Pbfree Code :

yes

Diode Element Material :

SILICON

Max Reverse Leakage Current :

1μA

Published :

2013

Mounting Type :

Chassis Mount

Peak Reverse Current :

1A

Max Surge Current :

3.5kA

Average Rectified Current :

500A