MBR40040CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Voltage (DC) :

40V

HTS Code :

8541.10.00.80

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Terminal Position :

UPPER

Max Repetitive Reverse Voltage (Vrrm) :

40V

Max Surge Current :

3kA

Number of Elements :

2

Current - Reverse Leakage @ Vr :

5mA @ 20V

Forward Current :

400A

Min Operating Temperature :

-40°C

RoHS Status :

RoHS Compliant

Diode Element Material :

SILICON

Published :

2010

Diode Type :

Schottky

Operating Temperature - Junction :

-55°C~150°C

Max Operating Temperature :

175°C

Element Configuration :

Common Anode

ECCN Code :

EAR99

Current - Average Rectified (Io) :

400A DC

Output Current-Max :

200A

Factory Lead Time :

4 Weeks

Max Reverse Leakage Current :

1μA

Peak Reverse Current :

1A

Average Rectified Current :

400A

Terminal Form :

UNSPECIFIED

Number of Terminations :

2

Mount :

Chassis Mount

Application :

Power

Number of Phases :

1

Package / Case :

Twin Tower

JESD-30 Code :

R-PUFM-X2

Packaging :

Bulk

Mounting Type :

Chassis Mount

Diode Configuration :

1 Pair Common Anode