MBR40035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Package / Case :

Twin Tower

Max Reverse Leakage Current :

1μA

Current - Reverse Leakage @ Vr :

1mA @ 35V

Application :

Power

Terminal Position :

UPPER

ECCN Code :

EAR99

Min Operating Temperature :

-40°C

Mounting Type :

Chassis Mount

Current - Average Rectified (Io) :

400A DC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.10.00.80

Average Rectified Current :

400A

Peak Reverse Current :

1A

Pbfree Code :

yes

Mount :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Number of Terminations :

2

Diode Type :

Schottky

Max Forward Surge Current (Ifsm) :

3kA

Forward Current :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Number of Pins :

2

Number of Elements :

2

Forward Voltage :

650mV

Number of Phases :

1

Voltage - Forward (Vf) (Max) @ If :

700mV @ 200A

Packaging :

Bulk

Max Surge Current :

3kA

Element Configuration :

Common Cathode

Factory Lead Time :

6 Weeks

RoHS Status :

RoHS Compliant

Diode Configuration :

1 Pair Common Cathode

Max Reverse Voltage (DC) :

35V

Operating Temperature - Junction :

-55°C~150°C

Max Repetitive Reverse Voltage (Vrrm) :

35V

Max Operating Temperature :

175°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Diode Element Material :

SILICON