MBR40035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Current - Reverse Leakage @ Vr :

1mA @ 35V

Number of Pins :

2

Number of Terminations :

2

Application :

Power

Mount :

Chassis Mount

Peak Reverse Current :

1A

Forward Current :

200A

Terminal Position :

UPPER

Factory Lead Time :

6 Weeks

Max Reverse Voltage (DC) :

35V

Diode Configuration :

1 Pair Common Cathode

Forward Voltage :

650mV

Max Repetitive Reverse Voltage (Vrrm) :

35V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Surge Current :

3kA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Average Rectified (Io) :

400A DC

Operating Temperature - Junction :

-55°C~150°C

Element Configuration :

Common Cathode

Terminal Form :

UNSPECIFIED

RoHS Status :

RoHS Compliant

Max Forward Surge Current (Ifsm) :

3kA

Number of Phases :

1

Package / Case :

Twin Tower

Diode Element Material :

SILICON

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Published :

2010

Min Operating Temperature :

-40°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Forward (Vf) (Max) @ If :

700mV @ 200A

ECCN Code :

EAR99

HTS Code :

8541.10.00.80

Average Rectified Current :

400A

Diode Type :

Schottky

Max Operating Temperature :

175°C

Number of Elements :

2

Pbfree Code :

yes

Packaging :

Bulk

Max Reverse Leakage Current :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount