MBR400100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Operating Temperature - Junction :

-55°C~150°C

Diode Type :

Schottky, Reverse Polarity

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Termination :

Solder

Max Reverse Leakage Current :

1μA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Orientation :

Straight

Current - Average Rectified (Io) :

400A DC

Mounting Type :

Chassis Mount

Pitch :

4.2mm

Number of Pins :

2

Max Operating Temperature :

175°C

Max Reverse Voltage (DC) :

100V

Diode Configuration :

1 Pair Common Anode

Peak Reverse Current :

1A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Voltage Rating (DC) :

600.6kV

Diode Element Material :

SILICON

Max Surge Current :

3kA

Max Repetitive Reverse Voltage (Vrrm) :

100V

RoHS Status :

RoHS Compliant

Forward Voltage :

840mV

Mount :

Chassis Mount, Through Hole

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Packaging :

Bulk

Element Configuration :

Common Anode

Forward Current :

200A

Package / Case :

Twin Tower

Number of Phases :

1

Number of Elements :

2

Number of Contacts :

14

Number of Terminations :

2

Min Operating Temperature :

-40°C

Max Forward Surge Current (Ifsm) :

3kA

Factory Lead Time :

4 Weeks

Current - Reverse Leakage @ Vr :

5mA @ 20V

Application :

Power

Terminal Position :

UPPER

Average Rectified Current :

400A

Voltage - Forward (Vf) (Max) @ If :

840mV @ 200A