MBR400100CTR
- Mfr.Part #
- MBR400100CTR
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- Twin Tower
- Datasheet
- Download
- Description
- DIODE MODULE 100V 200A 2TOWER
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Diodes - Rectifiers - Arrays
- RoHS Status :
- RoHS Compliant
- Diode Type :
- Schottky, Reverse Polarity
- Mounting Type :
- Chassis Mount
- Orientation :
- Straight
- Diode Configuration :
- 1 Pair Common Anode
- Package / Case :
- Twin Tower
- Number of Pins :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Chassis Mount, Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Element Material :
- SILICON
- Max Forward Surge Current (Ifsm) :
- 3kA
- Min Operating Temperature :
- -40°C
- Packaging :
- Bulk
- Max Repetitive Reverse Voltage (Vrrm) :
- 100V
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 175°C
- Number of Elements :
- 2
- Terminal Form :
- UNSPECIFIED
- Average Rectified Current :
- 400A
- Max Reverse Leakage Current :
- 1μA
- Termination :
- Solder
- Application :
- Power
- Factory Lead Time :
- 4 Weeks
- Operating Temperature - Junction :
- -55°C~150°C
- Max Reverse Voltage (DC) :
- 100V
- Current - Reverse Leakage @ Vr :
- 5mA @ 20V
- Forward Voltage :
- 840mV
- Number of Contacts :
- 14
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Max Surge Current :
- 3kA
- Terminal Position :
- UPPER
- REACH SVHC :
- No SVHC
- Current - Average Rectified (Io) :
- 400A DC
- Max Voltage Rating (DC) :
- 600.6kV
- Forward Current :
- 200A
- Number of Phases :
- 1
- Peak Reverse Current :
- 1A
- Element Configuration :
- Common Anode
- Voltage - Forward (Vf) (Max) @ If :
- 840mV @ 200A
- Pitch :
- 4.2mm
- Datasheets
- MBR400100CTR
Schottky, Reverse Polarity Rectifier Diode 1 Pair Common Anode Fast Recovery =< 500ns, > 200mA (Io) -55°C~150°C 400A 100V-DC 2-Element Twin Tower Chassis Mount
MBR400100CTR Overview
In this case, the forward voltage has to be set at 840mV to operate the device.Maintaining a surge current under 3kA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 200A to operate the device.A reverse voltage peak of 1A is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.
MBR400100CTR Features
840mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR400100CTR Applications
There are a lot of GeneSiC Semiconductor
MBR400100CTR applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Rectifiers for UBS
- Battery chargers
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- General Rectification
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