MBR40035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Twin Tower

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Surge Current :

3kA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Peak Reverse Current :

1A

Min Operating Temperature :

-40°C

Max Operating Temperature :

175°C

Max Reverse Leakage Current :

1μA

Number of Phases :

1

Current - Reverse Leakage @ Vr :

1mA @ 35V

REACH SVHC :

No SVHC

Diode Element Material :

SILICON

Diode Configuration :

1 Pair Common Anode

Number of Terminations :

2

Operating Temperature - Junction :

-55°C~150°C

Voltage - Forward (Vf) (Max) @ If :

700mV @ 200A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Current - Average Rectified (Io) :

400A DC

Element Configuration :

Common Anode

Number of Pins :

2

Packaging :

Bulk

Published :

2003

Terminal Form :

UNSPECIFIED

Average Rectified Current :

400A

HTS Code :

8541.10.00.80

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Position :

UPPER

Application :

Power

Diode Type :

Schottky, Reverse Polarity

Factory Lead Time :

6 Weeks

Forward Voltage :

650mV

Number of Elements :

2

Mount :

Chassis Mount

Max Reverse Voltage (DC) :

35V

Max Repetitive Reverse Voltage (Vrrm) :

35V

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

200A