MAT01GHZ

Manufacturer :

Analog Devices, Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

25mA

Package / Case :

TO-78-6 Metal Can

Case Connection :

SUBSTRATE

Terminal Position :

BOTTOM

hFE Min :

250

Vce Saturation (Max) @ Ib, Ic :

800mV @ 1mA, 10mA

Width :

9.4mm

Transistor Type :

2 NPN (Dual) Matched Pair

Collector Base Voltage (VCBO) :

45V

Pin Count :

6

DC Current Gain-Min (hFE) :

250

Radiation Hardening :

No

Packaging :

Bulk

Length :

9.4mm

Mounting Type :

Through Hole

Number of Pins :

6

Terminal Finish :

NICKEL PALLADIUM GOLD

Gain Bandwidth Product :

450MHz

Lifecycle Status :

Production (Last Updated: 4 weeks ago)

Transistor Element Material :

SILICON

Terminal Form :

Wire

Pbfree Code :

No

Transition Frequency :

450MHz

Height :

4.7mm

Base Part Number :

MAT01

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Contains Lead

Collector Emitter Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Frequency :

450MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

45V

RoHS Status :

ROHS3 Compliant

Breakdown Voltage :

45V

Number of Elements :

2

JESD-609 Code :

e4

Collector Emitter Saturation Voltage :

120mV

Mount :

Through Hole

Power Dissipation :

500mW

ECCN Code :

EAR99

Number of Terminations :

6

Polarity :

NPN

Current - Collector Cutoff (Max) :

400nA

Element Configuration :

Dual

Max Power Dissipation :

500mW