LBN150B01-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Width :

1.6mm

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

JESD-609 Code :

e3

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Published :

2008

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gain Bandwidth Product :

250MHz

Transistor Application :

SWITCHING

Max Collector Current :

200mA

Base Part Number :

LBN150B01

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA 1V / 32 @ 100mA 1V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Max Breakdown Voltage :

40V

Transistor Type :

NPN, PNP

ECCN Code :

EAR99

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

50nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Number of Pins :

6

hFE Min :

105

Mounting Type :

Surface Mount

Length :

3mm

Weight :

29.993795mg

Emitter Base Voltage (VEBO) :

6V

Height :

1.1mm

Number of Elements :

2

Collector Emitter Breakdown Voltage :

40V

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

300mW

Transition Frequency :

250MHz

Collector Emitter Voltage (VCEO) :

40V

Package / Case :

SOT-23-6

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Time-Max (ton) :

70ns

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Current Rating :

200mA

Turn Off Time-Max (toff) :

300ns

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA