KSP44TF
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- Mfr.Part #
- KSP44TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO92-3
- Stock
- 1,945
- In Stock ：
- 1,945
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Saturation Voltage :
- 750mV
- Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Published :
- 2007
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Base Part Number :
- KSP44
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 400V
- Collector Base Voltage (VCBO) :
- 500V
- Collector Emitter Voltage (VCEO) :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Max Collector Current :
- 300mA
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Max Frequency :
- 1MHz
- hFE Min :
- 50
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.19mm
- Current Rating :
- 300mA
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Voltage - Rated DC :
- 400V
- Height :
- 5.33mm
- Length :
- 5.2mm
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Datasheets
- KSP44TF
NPN 150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP44TF Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
KSP44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
KSP44TF Applications
There are a lot of ON Semiconductor
KSP44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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