KSP42TA
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- Mfr.Part #
- KSP42TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 32,140
- In Stock ：
- 32,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Published :
- 2002
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 3.86mm
- Height :
- 4.58mm
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Collector Emitter Voltage (VCEO) :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- Length :
- 4.58mm
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Base Part Number :
- KSP42
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Datasheets
- KSP42TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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