KSP42BU
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- Mfr.Part #
- KSP42BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- hFE Min :
- 40
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Length :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 300V
- Pbfree Code :
- yes
- Width :
- 3.86mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Max Power Dissipation :
- 625mW
- Weight :
- 179mg
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Transition Frequency :
- 50MHz
- Base Part Number :
- KSP42
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 300V
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Height :
- 4.58mm
- Gain Bandwidth Product :
- 50MHz
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Datasheets
- KSP42BU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP42BU Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KSP42BU Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42BU Applications
There are a lot of ON Semiconductor
KSP42BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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