KSH2955TF
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- Mfr.Part #
- KSH2955TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A DPAK
- Stock
- 10,079
- In Stock ：
- 10,079
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Weight :
- 260.37mg
- Collector Base Voltage (VCBO) :
- -70V
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -10A
- Published :
- 2014
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Saturation Voltage :
- -1.1V
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- KSH2955
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Frequency :
- 2MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 2MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 9 Weeks
- hFE Min :
- 20
- Max Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 10A
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Current - Collector Cutoff (Max) :
- 50μA
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Transition Frequency :
- 2MHz
- Power Dissipation :
- 1.75W
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- KSH2955TF
,%20SC-63.jpg)
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH2955TF Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 10A volts is possible.
KSH2955TF Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
KSH2955TF Applications
There are a lot of ON Semiconductor
KSH2955TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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