KSE44H11

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Mfr.Part #
KSE44H11
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Package / Case :
TO-220-3
Pbfree Code :
yes
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
80V
hFE Min :
60
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
Number of Elements :
1
Factory Lead Time :
2 Weeks
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transistor Type :
NPN
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 2A 1V
Collector Emitter Breakdown Voltage :
80V
VCEsat-Max :
1 V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Max Collector Current :
10A
Current - Collector Cutoff (Max) :
10μA
Collector Emitter Saturation Voltage :
1V
Voltage - Rated DC :
80V
Mounting Type :
Through Hole
Frequency :
50MHz
Current Rating :
10A
Radiation Hardening :
No
Weight :
1.8g
Max Power Dissipation :
50W
Gain Bandwidth Product :
50MHz
Transistor Application :
SWITCHING
Number of Pins :
3
Collector Base Voltage (VCBO) :
80V
Power - Max :
1.67W
Mount :
Through Hole
Published :
2001
JESD-609 Code :
e3
Transition Frequency :
50MHz
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
50W
Number of Terminations :
3
Datasheets
KSE44H11
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE44H11 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, KSE44H11 pinout, KSE44H11 datasheet PDF, KSE44H11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE44H11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE44H11


NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole

KSE44H11 Overview


In this device, the DC current gain is 60 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

KSE44H11 Features


the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


KSE44H11 Applications


There are a lot of ON Semiconductor
KSE44H11 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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