KSD560YTU
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- Mfr.Part #
- KSD560YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- Max Collector Current :
- 5A
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 1.5V
- Continuous Collector Current :
- 5A
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity :
- NPN
- Voltage - Rated DC :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 2000
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 3A 2V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 150V
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tube
- Published :
- 2000
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Current Rating :
- 5A
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Base Part Number :
- KSD560
- Datasheets
- KSD560YTU
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560YTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5000 @ 3A 2V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 3mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.
KSD560YTU Features
the DC current gain for this device is 5000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560YTU Applications
There are a lot of ON Semiconductor
KSD560YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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