KSD560RTSTU
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- Mfr.Part #
- KSD560RTSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220-3
- Stock
- 2,563
- In Stock ：
- 2,563
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 2000
- Voltage - Rated DC :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Max Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 150V
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 7V
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Continuous Collector Current :
- 5A
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1.5V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Published :
- 2000
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Length :
- 10.1mm
- RoHS Status :
- ROHS3 Compliant
- Height :
- 9.4mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity :
- NPN
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Weight :
- 1.8g
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- KSD560
- Width :
- 4.7mm
- Datasheets
- KSD560RTSTU
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
KSD560RTSTU Overview
DC current gain in this device equals 2000 @ 3A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
KSD560RTSTU Features
the DC current gain for this device is 2000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD560RTSTU Applications
There are a lot of ON Semiconductor
KSD560RTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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