KSD2012GTU
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- Mfr.Part #
- KSD2012GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 100
- Transition Frequency :
- 3MHz
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 2.54mm
- JESD-609 Code :
- e3
- Current Rating :
- 3A
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 3A
- Number of Pins :
- 3
- Weight :
- 2.27g
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 25W
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Power Dissipation :
- 25W
- Published :
- 2000
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Height :
- 15.87mm
- Length :
- 10.16mm
- Frequency :
- 3MHz
- Factory Lead Time :
- 14 Weeks
- Element Configuration :
- Single
- Datasheets
- KSD2012GTU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD2012GTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor
KSD2012GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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