JANTXV2N930
- Mfr.Part #
- JANTXV2N930
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.03A TO18
- Stock
- 42,138
- In Stock :
- 42,138
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Published :
- 2002
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- JESD-30 Code :
- O-MBCY-W3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10μA 5V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 2nA
- Power - Max :
- 300mW
- Factory Lead Time :
- 23 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 30mA
- Number of Terminations :
- 3
- Transition Frequency :
- 30MHz
- Case Connection :
- COLLECTOR
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500μA, 10mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 1V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Lead, Tin
- ECCN Code :
- EAR99
- Reference Standard :
- MIL-19500/253H
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.95
- Terminal Form :
- Wire
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/253
- Mount :
- Through Hole
- Datasheets
- JANTXV2N930
NPN -55°C~200°C TJ 2nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N930 Overview
In this device, the DC current gain is 100 @ 10μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500μA, 10mA.30MHz is present in the transition frequency.Maximum collector currents can be below 30mA volts.
JANTXV2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
a transition frequency of 30MHz
JANTXV2N930 Applications
There are a lot of Microsemi Corporation
JANTXV2N930 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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