JANTXV2N5666
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- Mfr.Part #
- JANTXV2N5666
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO5
- Stock
- 22,579
- In Stock ：
- 22,579
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Series :
- Military, MIL-PRF-19500/455
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-5
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Terminal Form :
- PIN/PEG
- Collector Emitter Voltage (VCEO) :
- 200V
- Power Dissipation :
- 1.2W
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 250V
- JESD-30 Code :
- O-MBFM-P2
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1.2W
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 20 Weeks
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 200nA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 5A
- Packaging :
- Bulk
- Contact Plating :
- Lead, Tin
- Datasheets
- JANTXV2N5666
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5666S Overview
DC current gain in this device equals 40 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation
JANTXV2N5666S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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