JANTXV2N5416S
- Mfr.Part #
- JANTXV2N5416S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO39
- Stock
- 13,050
- In Stock :
- 13,050
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBCY-W4
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Number of Terminations :
- 4
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 300V
- Series :
- Military, MIL-PRF-19500/485
- Qualification Status :
- Qualified
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-5
- Max Power Dissipation :
- 750mW
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 350V
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Datasheets
- JANTXV2N5416S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5416S Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTXV2N5416S Applications
There are a lot of Microsemi Corporation
JANTXV2N5416S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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