JANTXV2N5416S

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Mfr.Part #
JANTXV2N5416S
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 300V 1A TO39
Stock
13,050
In Stock :
13,050

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
O-MBCY-W4
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
2V @ 5mA, 50mA
Number of Terminations :
4
Package / Case :
TO-205AD, TO-39-3 Metal Can
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
1mA
Pin Count :
3
Terminal Position :
BOTTOM
Mount :
Through Hole
Operating Temperature :
-65°C~200°C TJ
Pbfree Code :
No
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Case Connection :
COLLECTOR
Terminal Finish :
Tin/Lead (Sn/Pb)
Max Collector Current :
1A
Collector Emitter Voltage (VCEO) :
300V
Series :
Military, MIL-PRF-19500/485
Qualification Status :
Qualified
Published :
2007
Polarity/Channel Type :
PNP
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Type :
PNP
JEDEC-95 Code :
TO-5
Max Power Dissipation :
750mW
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Power Dissipation :
750mW
Emitter Base Voltage (VEBO) :
6V
Number of Pins :
3
JESD-609 Code :
e0
Number of Elements :
1
Collector Base Voltage (VCBO) :
350V
Lead Free :
Contains Lead
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
20 Weeks
Terminal Form :
Wire
Packaging :
Bulk
Datasheets
JANTXV2N5416S
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N5416S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Number of Pins:3, JANTXV2N5416S pinout, JANTXV2N5416S datasheet PDF, JANTXV2N5416S amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N5416S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JANTXV2N5416S Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

JANTXV2N5416S Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V


JANTXV2N5416S Applications


There are a lot of Microsemi Corporation
JANTXV2N5416S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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